Plasmonic interconnects versus conventional interconnects: a comparison of latency, crosstalk and energy costs

被引:93
作者
Conway, J. A.
Sahni, S.
Szkopek, T.
机构
[1] Aerosp Corp, El Segundo, CA 90245 USA
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源
OPTICS EXPRESS | 2007年 / 15卷 / 08期
关键词
D O I
10.1364/OE.15.004474
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The continued scaling of integrated circuits will require advances in intra-chip interconnect technology to minimize delay, density of energy dissipation and cross-talk. We present the first quantitative comparison between the performance of metal wire interconnects, operated in the traditional manner by electric charge and discharge, versus the performance of metal wires operated as surface plasmon waveguides. Surface plasmon wire waveguides have the potential to reduce signal delay, but the high confinement required for low cross-talk amongst high density plasmon wire interconnects significantly increases energy dissipation per transmitted bit, above and beyond that required for electric charge/discharge interconnects at the same density. (c) 2007 Optical Society of America.
引用
收藏
页码:4474 / 4484
页数:11
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