Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer

被引：41

作者：

Noblanc, O ^{[1
]}

Arnodo, C ^{[1
]}

Dua, C ^{[1
]}

Chartier, E ^{[1
]}

Brylinski, C ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, FR-91401 Orsay, France

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

MESFET; microwave; semi-insulating substrate;

D O I：

10.4028/www.scientific.net/MSF.338-342.1247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MESFET's have been processed either on conductive and semi-insulating wafers. After packaging of the dies, load-pull measurements have been performed at 1 and 2 GHz on various gate periphery transistors. A decrease of the power density with gate periphery has been observed. Besides, a maximum value of 2.5W/mm has been obtained with transistors processed on S.I substrate while 4W/mm has been measured on conductive wafer. A shape change of the de I-V characteristics has been shown when high biasing which results in a decrease of the rf sweep power. We think that a high density of deep traps inside the S.I wafers are responsible for such a phenomenon.

引用

页码：1247 / 1250

页数：4

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