The electrical transport in luminescent porous silicon

被引:10
作者
Reshotko, MR
Sa'ar, A
Balberg, I [1 ]
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Sch Appl Sci, IL-91904 Jerusalem, Israel
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 197卷 / 01期
关键词
D O I
10.1002/pssa.200306478
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various electrical conduction routes and transport mechanisms have been proposed previously to explain the electrical properties of luminescent porous silicon (LPSi). A review of the available data seems to indicate that there are more independent types of data that suggest the scenario of inter-crystallite tunneling under Coulomb blockade conditions, than types of data that suggest other route-mechanism scenarios. However, all the corresponding interpretations were based on data that were of a qualitative-suggestive nature. In this communication we present quantitative evidence for the above-mentioned scenario, thus establishing it as the most likely model to account for the electrical properties of LPSi.
引用
收藏
页码:113 / 116
页数:4
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