Epitaxial (Ba,Sr)TiO3 capacitors with extremely high dielectric constant for DRAM applications

被引：8

作者：

Fukushima, N ^{[1
]}

Abe, K ^{[1
]}

Izuha, M ^{[1
]}

Schimizu, T ^{[1
]}

Kawakubo, T ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Res & Dev, Mat & Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel dielectric capacitor cell was developed using a (Ba,Sr)TiO3 heteroepitaxial technique on SrRuO3 electrodes. An extremely high dielectric constant was observed in 20-nm thick (Ba,Sr)TiO3 capacitors, which correspond to the effective SiO2 thickness of 0.084 nm. The leakage current of these capacitors was found to low and their superior reliability compared to conventional polycrystalline capacitors was confirmed.

引用

页码：257 / 260

页数：4