SiGe HBT push-push oscillators for V-band operation

被引：10

作者：

Sinnesbichler, FX ^{[1
]}

Olbrich, GR ^{[1
]}

机构：

[1] Tech Univ Munich, Lehrstuhl Hochfrequenztech, D-80333 Munich, Germany

来源：

2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/SMIC.2000.844297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of the push-push principle to oscillator design allows the extension of the usable frequency range of transistors for signal generating applications. In this paper, we present several V-band SiGe HBT push-push oscillators using both microstrip transmission line resonators as well as dielectric resonators. The circuits are fabricated in thin film technology on alumina substrates. The measured data of the microstrip transmission line oscillators are an output power of -5.6 dBm and a single sideband phase noise of L-ssb(1MHz) = -98dBc/Hz as well as +1dBm and -108 dBc/Hz, respectively. For the dielectric resonator oscillators a maximum output power of -8 dBm and an optimum phase noise of -112 dBc/Hz (at -14 dBm output power) were measured.

引用

页码：55 / 59

页数：5

共 23 条

[1] 80GHz AlGaAs HBT oscillator [J].

Aoki, I ;

Tezuka, K ;

Matsuura, H ;

Kobayashi, S ;

Fujita, T ;

Miura, A .

GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, :281-284

[2]

FUJII K, P AS PAC MICR C 1993, V1

[3] MILLIMETER-WAVE ALGAAS/INGAAS HETEROJUNCTION FINITE-ELEMENT MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT OSCILLATORS [J].

FUNABASHI, M ;

OHATA, K ;

ONDA, K ;

INOUE, T ;

HOSOYA, K ;

MARUHASHI, K ;

KUZUHARA, M .

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1995, 78 (05) :49-56

[4]

FUNABASHI M, 1994, GAAS IC SYMPOSIUM, 16TH ANNUAL - TECHNICAL DIGEST 1994, P30

[5]

Hyun AS, 1999, IEEE MTT-S, P725, DOI 10.1109/MWSYM.1999.779862

[6]

INOUE T, 1995, 25 EUR MICR C, P281

[7] V-band high-power low phase-noise monolithic oscillators and investigation of low phase-noise performance at high drain bias [J].

Kashiwa, T ;

Ishida, T ;

Katoh, T ;

Kurusu, H ;

Hoshi, H ;

Mitsui, Y .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (10) :1559-1565

[8]

KAWASAKI Y, 1995, IEEE MTT-S, P541, DOI 10.1109/MWSYM.1995.406029

[9]

KUDSZUS S, 1998, IEEE MTT S INT MICR, P1585

[10]

LIU CM, 1990, MICROWAVE J JUN, P165

← 1 2 3 →