Growth of AlxGa1-xN-layers on planar and patterned substrates

被引：7

作者：

Rossow, U

Fuhrmann, D

Greve, M

Bläsing, J

Krost, A

Ecke, G

Riedel, N

Hangleiter, A

机构：

[1] Tech Univ Braunschweig, Inst F Tech Phys, Braunschweig, Germany

[2] Otto Von Guericke Univ, Inst F Exp Phys, D-39016 Magdeburg, Germany

[3] Tech Univ Ilmenau, Inst F Festkorperelektron, D-98684 Ilmenau, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

atomic force microscopy; high resolution X-ray diffraction; surfaces; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials; semiconducting ternary compounds;

D O I：

10.1016/j.jcrysgro.2004.09.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxGal-xN-layers are applied in various devices based on group-III-nitride semiconductors. Crystalline quality, composition and morphology need to be controlled by properly adjusting growth processes. Here, we report on AlGaN growth by low-pressure MOVPE on planar and patterened surfaces of sapphire and 6H-SiC(0001) with focus on Al-incorporation and lateral growth. All layers show good surface morphology, near bandedge luminescence and no sign of phase separation (Al-concentration < 50%). The Al-incorporation depends critically on growth parameters. For high pressures of 200 mbar Al is hardly incorporated which can be understood as a result of prereactions involving TMAl and NH3. For patterened substrates PL indicates lateral variation in Al composition as a consequence of mass transport and a reduced lateral growth rate. (C) 2004 Elsevier BN. All rights reserved.

引用

页码：506 / 514

页数：9

共 23 条

[1] Growth of AlxGa1-xN and GaN on photo-electrochemically patterned SiC suhstrates [J].