Growth of AlxGa1-xN-layers on planar and patterned substrates

被引:7
作者
Rossow, U
Fuhrmann, D
Greve, M
Bläsing, J
Krost, A
Ecke, G
Riedel, N
Hangleiter, A
机构
[1] Tech Univ Braunschweig, Inst F Tech Phys, Braunschweig, Germany
[2] Otto Von Guericke Univ, Inst F Exp Phys, D-39016 Magdeburg, Germany
[3] Tech Univ Ilmenau, Inst F Festkorperelektron, D-98684 Ilmenau, Germany
关键词
atomic force microscopy; high resolution X-ray diffraction; surfaces; metalorganic vapor phase epitaxy; nitrides; semiconducting III-V materials; semiconducting ternary compounds;
D O I
10.1016/j.jcrysgro.2004.09.044
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
AlxGal-xN-layers are applied in various devices based on group-III-nitride semiconductors. Crystalline quality, composition and morphology need to be controlled by properly adjusting growth processes. Here, we report on AlGaN growth by low-pressure MOVPE on planar and patterened surfaces of sapphire and 6H-SiC(0001) with focus on Al-incorporation and lateral growth. All layers show good surface morphology, near bandedge luminescence and no sign of phase separation (Al-concentration < 50%). The Al-incorporation depends critically on growth parameters. For high pressures of 200 mbar Al is hardly incorporated which can be understood as a result of prereactions involving TMAl and NH3. For patterened substrates PL indicates lateral variation in Al composition as a consequence of mass transport and a reduced lateral growth rate. (C) 2004 Elsevier BN. All rights reserved.
引用
收藏
页码:506 / 514
页数:9
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