Impurity effect on charge carrier transport in smectic liquid crystals

被引:46
作者
Funahashi, M [1 ]
Hanna, J [1 ]
机构
[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1016/j.cplett.2004.08.125
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The impurity effect on the charge carrier transport in a smectic liquid crystal was investigated by time-of-flight experiments with a model system of a 2-phenylnaphthalene derivative of 2-(4'-octylpheny)-6-dodecyloxynaphthalene (8-PNP-O12) and a neutral impurity of dihexylterthiophene that can be a chemical impurity for hole and electron. In contrast to ionic conduction in the isotropic phase of doped 8-PNP-O12, two-dimensional trap-controlled electronic conduction took place in the SmB phase, and the electronic and ionic conductions coexisted in the SmA phase and the electronic conduction vanished when the impurity concentration was increased over 50 ppm. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:319 / 323
页数:5
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