High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics

被引:34
作者
Bai, XD
Zhi, CY
Liu, S
Wang, EG [1 ]
Wang, ZL
机构
[1] Chinese Acad Sci, Int Ctr Quantum Struct, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
中国国家自然科学基金;
关键词
semiconductor; electronic transport;
D O I
10.1016/S0038-1098(02)00720-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
High-density (similar to10(8)/cm(2)), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along <112>, and are coated in situ with a similar to3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/mum. (for 10 muA/cm(2)) and threshold field of 3 V/mum (for 10 muA/cm(2)), suggesting their potential applications for flat panel displays. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:185 / 188
页数:4
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