Ferromagnetic and ferroelectric behaviors of A-site substituted YMnO3-based epitaxial thin films

被引：42

作者：

Fujimura, N ^{[1
]}

Sakata, H ^{[1
]}

Ito, D ^{[1
]}

Yoshimura, T ^{[1
]}

Yokota, T ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Grad Sch Engn, Dept Appl Mat Sci, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1556165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric and magnetic properties of A-site substituted YMnO3 epitaxial films were studied. Stoichiometric epitaxial YMnO3 films clearly show ferroelectric behavior in P-E and C-V measurements. The I-V property is well explained by the Pool-Frenkel-type carrier emission with p-type conduction due to the existence of Mn4+, and the activation energy is calculated to be 0.58 eV. The leakage current decreases by substituting Y for Zr and increases by Li or Mg substitution. Although YMnO3 films exhibit antiferromagnetic magnetization behavior regardless of the crystallographic orientation and the carrier concentration, Li-doped sample displays parasitic ferromagnetic behavior (weak ferromagnetism). Substituting Y for Yb enhances the ferromagnetic interaction. (C) 2003 American Institute of Physics.

引用

页码：6990 / 6992

页数：3

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