Crystal-face dependences of surface band edges and hole reactivity, revealed by preparation of essentially atomically smooth and stable (110) and (100) n-TiO2 (rutile) surfaces

被引:101
作者
Nakamura, R
Ohashi, N
Imanishi, A
Osawa, T
Matsumoto, Y
Koinuma, H
Nakato, Y [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Div Chem, Toyonaka, Osaka 5608531, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1021/jp044710t
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Essentially atomically smooth (100) and (110) n-TiO2 (rutile) surfaces were prepared by immersion of commercially available single-crystal wafers in 20% HF, followed by annealing at 600 degreesC in air. The obtained surfaces were stable in aqueous solutions of pH 1-13, showing no change in the surface morphology on an atomic level, contrary to atomically flat surfaces prepared by ion sputtering and annealing under UHV. The success in preparation of the atomically smooth and stable n-TiO2 surfaces enabled us to reveal clear crystal-face dependences of the surface band edges and hole reactivity in aqueous solutions.
引用
收藏
页码:1648 / 1651
页数:4
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