Development of a multiscale model for an atomic layer deposition process

被引：49

作者：

Adomaitis, Raymond A. ^{[1
]}

机构：

[1] Univ Maryland, Dept Chem & Biomol Engn, Syst Res Inst, College Pk, MD 20742 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期

基金：

美国国家科学基金会;

关键词：

Computer simulation; Growth models; Mass transfer; Surface structure; Atomic layer epitaxy;

D O I：

10.1016/j.jcrysgro.2009.12.041

中图分类号：

O7 [晶体学];

学科分类号：

070301 [无机化学];

摘要：

A multiscale model of atomic layer deposition (ALD) inside a nanoporous material is developed in this paper. The overall model couples a lattice Monte Carlo simulator describing molecular-scale growth of the ALD film to a continuum description of the precursor transport within the nanopore. The multiscale simulation approach is used to study how intra-pore precursor depletion leads to nonuniform ALD films and to examine whether film properties, such as composition and surface roughness, are functions of position within the pore. (C) 2010 Elsevier BM. All rights reserved.

引用

页码：1449 / 1452

页数：4

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