Low-density framework form of crystalline silicon with a wide optical band gap

被引:272
作者
Gryko, J [1 ]
McMillan, PF
Marzke, RF
Ramachandran, GK
Patton, D
Deb, SK
Sankey, OF
机构
[1] Jacksonville State Univ, Dept Phys & Earth Sci, Jacksonville, AL 36265 USA
[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[3] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
关键词
D O I
10.1103/PhysRevB.62.R7707
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Synthesis of a guest-free clathrate form of crystalline silicon was;achieved by successive vacuum treatment and density separation of NaxSi136-based materials. The new allotrope of silicon has an open framework structure based upon slightly distorted tetrahedral atoms bound into five- and six-membered ring structures, and corresponds to a fully saturated and condensed fullerane-type solid. Theoretical calculations indicate that the new form of silicon should be a wide bandgap semiconductor. This prediction is borne Out by experiment: electrical conductivity and optical absorption measurements yield a band gap of 1.9 eV, approximately twice the value of "normal" semiconducting silicon.
引用
收藏
页码:R7707 / R7710
页数:4
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