Mechanism of sensitivity promotion in CO sensor using indium oxide and cobalt oxide

被引:140
作者
Yamaura, H
Moriya, K
Miura, N
Yamazoe, N [1 ]
机构
[1] Kyushu Univ, Grad Sch Engn Sci, Dept Mol & Mat Sci, Fukuoka 8168580, Japan
[2] Osaka Gas, Ctr Res & Dev, Konohana Ku, Osaka 5540051, Japan
关键词
carbon monoxide; semiconductor gas sensor; combustion exhaust; indium oxide; cobalt oxide; surface modification;
D O I
10.1016/S0925-4005(99)00456-6
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The sensitivity, as well as selectivity of an In2O3-based element to CO over H-2, was improved dramatically by the addition of 0.5 wt.% cobalt oxide and 0.04 wt.% Au. The doubly promoted element thus obtained gave excellent GO-sensing characteristics at 250 degrees C. It was suggested from the measurements of catalytic oxidation activities of the In2O3-based materials that the remarkable promotion of CO-sensing properties originated from the proper enhancement of CO oxidation activity. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:39 / 41
页数:3
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