Structural trends and chemical bonding in Te-doped silicon clathrates

被引：18

作者：

Jaussaud, N

Pouchard, M

Gravereau, P

Pechev, S

Goglio, G

Cros, C

San Miguel, A

Toulemonde, P

机构：

[1] Univ Bordeaux 1, CNRS, UPR 9048, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France

[2] Univ Lyon 1, Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France

[3] CNRS, F-69622 Villeurbanne, France

来源：

INORGANIC CHEMISTRY | 2005年 / 44卷 / 07期

关键词：

D O I：

10.1021/ic040112h

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The recently discovered tellurium-doped silicon clathrates, Te(7+x)Si(20-x) and Te(16)Si(38), both low- and high-temperature forms (cubic and rhombohedral, respectively), exhibit original structures that are all derived from the parent type I clathrate G(8)Si(46) (G = guest atom). The similarities and differences between the structures of these compounds and that of the parent one are analyzed and discussed on the basis of charge distribution and chemical bonding considerations. Because of the particular character of the Te atom, these compounds appear to be at the border between the clathrate and polytelluride families.

引用

页码：2210 / 2214

页数：5

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