A new CVD film formation process using ionization of TEOS

被引：2

作者：

Adachi, M ^{[1
]}

Hayasi, T ^{[1
]}

Fujimoto, T ^{[1
]}

Okuyama, K ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Osaka, Japan

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING CONFERENCE PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/ISSM.1997.664635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new CVD method called ionization CVD, where source molecules ionized were deposited on a substrate by Coulombic force, was developed to control film formation and particle generation. This method was applied to the TEOS/O-3-APCVD process by using the surface corona discharge. The growth rate of film formed by the ionization CVD was 2-4 times higher than that by the common CVD. Films deposited by the new CVD showed strongly the now-like shape. Nanometer-sized particles which have been generally generated in the common reactor, were not detected in the ionization CVD reactor.

引用

页码：P103 / P105

页数：3