Sputtering deposition and characterization of Ru-doped WO3 thin films for electrochromic applications

被引：23

作者：

Cazzanelli, E

Castriota, M

Kalendarev, R

Kuzmin, A

Purans, J

机构：

[1] Univ Calabria, Dept Phys, I-87036 Cosenza, Italy

[2] Univ Calabria, Unita INFM Cosenza, I-87036 Cosenza, Italy

[3] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

IONICS | 2003年 / 9卷 / 1-2期

关键词：

D O I：

10.1007/BF02376544

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mixed tungsten-ruthenium oxide thin films were prepared for the first time by dc magnetron co-sputtering technique and were studied by cyclic voltammetry, optical transmission measurements, Raman spectroscopy and the W L-3 and Ru K edges X-ray absorption spectroscopy (XAS) in comparison with pure WO3 films. The Ru concentration was varied in the range from 0 to 28 at.%. XAS results suggest that the average local structure around both tungsten and ruthenium ions remains unchanged within experimental accuracy in all samples, moreover, for tungsten ions, it resembles that of pure WO3 films. However, the presence of the ruthenium ions affects the electrochemical and optical properties of the films. Our results suggest that mixed films are formed by tungsten trioxide grains surrounded by ruthenium oxide phase.

引用

页码：95 / 102

页数：8

共 22 条

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Aksenov VL, 2001, PHYS PART NUCLEI, V32, P675

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