Pairs of Si atomic lines self-assembling on the β-SiC(100) surface:: an 8 x 2 reconstruction

被引:43
作者
Douillard, L
Aristov, VY
Semond, F
Soukiassian, P
机构
[1] Ctr Etud Saclay, Commissariat Energie Atom, SRSIM, DRECAM,DSM, F-91191 Gif Sur Yvette, France
[2] Univ Paris Sud, Dept Phys, F-91405 Orsay, France
关键词
scanning tunneling microscopy; silicon carbide; superlattices; surface relaxation and reconstruction; surface structure; morphology; roughness and topography;
D O I
10.1016/S0039-6028(98)00077-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the transition between beta-SiC(100) surface reconstructions using scanning tunneling microscopy (filled and empty electronic states). We find the unexpected formation of Si-dimer lines that are self-assembled by pairs with a long-range order resulting in an even 8 x 2 surface reconstruction. This very uncommon surface ordering results in the combination of alternating periodic 3 x 2 and 5 x 2 unit cells. In contrast to the beta-SiC(100)3 x 2 surface reconstruction, the Si-dimers are symmetric. Such atomic line pairs provide a novel type of one dimensional sub-nanostructure potentially having interesting characteristics. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L395 / L400
页数:6
相关论文
共 14 条
  • [1] CHARACTERIZATION OF RECONSTRUCTED SIC(100) SURFACES USING SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY
    BERMUDEZ, VM
    LONG, JP
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (04) : 475 - 477
  • [2] Bermudez VM, 1997, PHYS STATUS SOLIDI B, V202, P447, DOI 10.1002/1521-3951(199707)202:1<447::AID-PSSB447>3.0.CO
  • [3] 2-I
  • [4] ELEMENTAL COMPOSITION OF BETA-SIC(001) SURFACE PHASES STUDIED BY MEDIUM ENERGY ION-SCATTERING
    HARA, S
    SLIJKERMAN, WFJ
    VANDERVEEN, JF
    OHDOMARI, I
    MISAWA, S
    SAKUMA, E
    YOSHIDA, S
    [J]. SURFACE SCIENCE, 1990, 231 (03) : L196 - L200
  • [5] ADDITIONAL DIMER-ROW STRUCTURE OF 3C-SIC(001) SURFACES OBSERVED BY SCANNING-TUNNELING-MICROSCOPY
    HARA, S
    MISAWA, S
    YOSHIDA, S
    AOYAGI, Y
    [J]. PHYSICAL REVIEW B, 1994, 50 (07): : 4548 - 4553
  • [6] IVANOV PA, 1995, SEMICONDUCTORS+, V29, P1003
  • [7] KAPLAN R, 1995, EMIS DATA REV SERIES, V13, P101
  • [8] Structural determination of beta-SiC(100)-c(2x2) from C-1s surface-core-exciton and Si-2p absorption
    Long, JP
    Bermudez, VM
    Ramaker, DE
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (06) : 991 - 994
  • [9] *MAT RES SOC B, 1997, SIL CARB EL DEV MAT, V22
  • [10] Atomic structure of the beta-SiC(100)-(3x2) surface
    Semond, F
    Soukiassian, P
    Mayne, A
    Dujardin, G
    Douillard, L
    Jaussaud, C
    [J]. PHYSICAL REVIEW LETTERS, 1996, 77 (10) : 2013 - 2016