Atomistic model of transient enhanced diffusion and clustering of boron in silicon

被引：3

作者：

Pelaz, L ^{[1
]}

Gilmer, GH ^{[1
]}

Jaraiz, M ^{[1
]}

Gossmann, HJ ^{[1
]}

Rafferty, CS ^{[1
]}

Eaglesham, DJ ^{[1
]}

Poate, JM ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An atomistic model for B implantation, diffusion and clustering is presented. The model embodies the usual mechanism of Si self-interstitial diffusion and B kick-out and also includes the formation of immobile precursors of B clusters prior to the onset of transient enhanced diffusion. These immobile complexes, such as BL (a B atom with two Si self-interstitials) form during implantation or in the very early stages of annealing, when the Si interstitial concentration is very high. They then act as nucleation centers for the formation of B-rich clusters during annealing. This model explains and predicts the behavior of B under a nide variety of implantation and annealing conditions.

引用

页码：341 / 346

页数：6