Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films

被引：12

作者：

Noguchi, T

Hase, T

Miyasaka, Y

机构：

[1] Fundamental Research Laboratories, NEC Corporation 4-1-1 Miyazaki, Miyamae-ku

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

ferroelectric thin film; temperature dependence; SBT;

D O I：

10.1080/10584589708012981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature dependence of ferroelectric properties was studied on SrBi2Ta2O9 thin films with stoichiometric composition and Sr deficient and/or Bi excess compositions. Decreasing rate of remanent polarization P-r with increasing temperature was fairly small for the 20 % Sr deficient compositions compared to the stoichiometric Sr content compositions. The large P-r decrease for the stoichiometric compositions was attributed to the increase of fast polarization relaxation with increasing temperature. Fatigue-free property was confirmed even at 150 degrees C for all compositions.

引用

页码：57 / 65

页数：9

共 7 条

[1]

AMANUMA K, 1995, MATER RES SOC SYMP P, V361, P21, DOI 10.1557/PROC-361-21

[2] Sr content dependence of ferroelectric properties in SrBi2Ta2O9 thin films [J].