Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region

被引：15

作者：

Lee, ZK ^{[1
]}

McIlrath, MB ^{[1
]}

Antoniadis, DA ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new, comprehensive technique for the extraction of two-dimensional (2D) doping profiles in sub-micron MOS transistors using I-V characteristics in the subthreshoId region. The main advantages of this technique include: (1) ability to extract 2D doping profiles of devices having very short channel lengths due to its immunity to parasitic capacitances and noise; (2) low sensitivity to gate area variations; (3) low dependence on mobility model; (4) non-destructive nature; (5) no special test structures neccessary; and (6) simplicity of data collection and preparation, as well as general ease of use.

引用

页码：683 / 686

页数：4