Elastic anomaly for SrTiO3 thin films grown on Si(001) -: art. no. 201403

被引：32

作者：

Aguirre-Tostado, FS

Herrera-Gómez, A

Woicik, JC

Droopad, R

Yu, Z

Schlom, DG

Zschack, P

Karapetrova, E

Pianetta, P

Hellberg, CS

机构：

[1] CINVESTAV Queretaro, Queretaro 76230, Mexico

[2] Natl Inst Stand & Technol, Div Ceram, Gaithersburg, MD 20899 USA

[3] Motorola Labs, Microelect & Phys Sci Labs, Tempe, AZ 85284 USA

[4] Penn State Univ, University Pk, PA 16802 USA

[5] Univ Illinois, Argonne Natl Lab, APS UNICAT, Argonne, IL 60439 USA

[6] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

[7] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.70.201403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray diffraction measurements have revealed a negative Poisson's ratio for SrTiO3 thin films grown on Si(001). X-ray absorption fine-structure measurements demonstrate that this elastic anomaly is driven by the interfacial polarization of the SrTiO3 layers. First-principles density-functional calculations support these conclusions. It is suggested that this phenomenon may be common for heteroepitaxial growth of materials that possess an ionic polarizability.

引用

页码：201403 / 1

页数：4

共 18 条

[1]

[Anonymous], 1981, THEORY ELASTICITY

[2] ELASTIC CONSTANTS OF STRONTIUM TITANATE [J].