Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires

被引：52

作者：

Philipose, U. ^{[1
]}

Yang, S. ^{[1
]}

Xu, T. ^{[1
]}

Ruda, Harry E. ^{[1
]}

机构：

[1] Univ Toronto, Ctr Nanotechnol, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2457190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was estimated to be 18 +/- 0.5 meV and the shallow impurity Bohr radius was estimated to be 9.1 +/- 0.2 nm. Using a postgrowth annealing treatment in a Zn atmosphere, the two species involved in the donor-acceptor pair recombination process were attributed to Zn vacancies and Zn interstitials. (c) 2007 American Institute of Physics.

引用

页数：3

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