Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate

被引：133

作者：

Yoon, KH ^{[1
]}

Choi, WJ

Kang, DH

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Suwon Univ, Dept Elect Mat Engn, Suwon 445743, South Korea

来源：

THIN SOLID FILMS | 2000年 / 372卷 / 1-2期

关键词：

cuprous oxide; electrochemistry; silicon; XPS;

D O I：

10.1016/S0040-6090(00)01058-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. Ln case of the films deposited below 200 degrees C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent-potential (I-V) properties by forming a copper oxide/n-silicon heterojunction. Ln particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：250 / 256

页数：7

共 31 条

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