Damage from proton irradiation of vertical-cavity surface-emitting lasers

被引：18

作者：

Paxton, AH ^{[1
]}

Carson, RF

Schone, H

Taylor, EW

Choquette, KD

Hou, HQ

Lear, KL

Warren, ME

机构：

[1] USAF, Phillips Lab, VTMC, Kirtland AFB, NM 87117 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.658958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Damage resulting from irradiating oxide-confined vertical-cavity surface-emitting lasers became significant (threshold shift approximate to 20%, peak power degradation approximate to 20%) at fluence levels approaching 1 x 10(13) protons/cm(2). The threshold current shifted to higher values, and the peak light output power decreased. Forward-current annealing led to partial recovery of the performance of two of the three lasers for which annealing was attempted. Recent results[1-3] on proton-implanted devices are summarized in a table.

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页码：1893 / 1897

页数：5

相关论文

共 12 条

[1] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES [J].

BARNES, CE .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4735-+

[2]

CARLSON NW, 1994, MONOLITHIC DIODE LAS, P63

[3]

CARSON RF, 1997, SPIE CRITICAL REV OP, V66, P121

[4] FABRICATION AND PERFORMANCE OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].

CHOQUETTE, KD ;

LEAR, KL ;

SCHNEIDER, RP ;

GEIB, KM ;

FIGIEL, JJ ;

HULL, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1237-1239

[5] 5.5-MEV PROTON IRRADIATION OF A STRAINED-QUANTUM-WELL LASER-DIODE AND A MULTIPLE-QUANTUM-WELL BROAD-BAND LED [J].

EVANS, BD ;

HAGER, HE ;

HUGHLOCK, BW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1645-1654

[6] PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS [J].

HASNAIN, G ;

TAI, K ;

YANG, L ;

WANG, YH ;

FISCHER, RJ ;

WYNN, JD ;

WEIR, B ;

DUTTA, NK ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1377-1385

[7] VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 21-PERCENT EFFICIENCY BY METALORGANIC VAPOR-PHASE EPITAXY [J].

LEAR, KL ;

SCHNEIDER, RP ;

CHOQUETTE, KD ;

KILCOYNE, SP ;

FIGIEL, JJ ;

ZOLPER, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (09) :1053-1055

[8]

SCHONE H, IN PRESS IEEE PHOTON

[9] DAMAGE CORRELATIONS IN SEMICONDUCTORS EXPOSED TO GAMMA-RADIATION, ELECTRON-RADIATION AND PROTON-RADIATION [J].

SUMMERS, GP ;

BURKE, EA ;

SHAPIRO, P ;

MESSENGER, SR ;

WALTERS, RJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (06) :1372-1379

[10]

TAYLOR EW, 1997, UNPUB VACUO RESPONSE