Growth of LaNiO3 thin films on MgO by flash MOCVD

被引：17

作者：

Gorbenko, OY ^{[1
]}

Bosak, AA ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 186卷 / 1-2期

关键词：

MOCVD; XRD characterization; Lanthanum nickelate; In-plane alignment;

D O I：

10.1016/S0022-0248(97)00454-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

LaNiO3 thin films on MgO were grown by flash MOCVD on single crystalline (0 0 1)MgO substrates using La(thd)(3), Ni(acim)(2) or Ni(thd)(2) (acim and thd are anions of acetylacetonimine and dipivaloylmethane, respectively) as volatile precursors. X-ray diffraction study of the films with different thicknesses was used to clarify the growth peculiarities. Two stages of growth were observed. At the beginning (0 0 1) oriented LaNiO3 layer (pseudocubic indices) grows with uniform in-plane alignment. Next, another orientation, namely (1 1 0), aligned in-plane with (0 0 1) layer appears as auxiliary one. In-plane matching variants are discussed. Consistent explanation of the preferable in-plane orientations observed was achieved with a nearly coincident sites lattices (NCSL) analysis. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：181 / 188

页数：8

共 27 条

[1] PREPARATION AND PROPERTIES OF BIS-(4-AMINO-3-PENTENE-2-ONO)-NICKEL(II) [J].

ARCHER, RD .

INORGANIC CHEMISTRY, 1963, 2 (02) :292-&

[2] OPTICAL STUDY OF ELECTRONIC-STRUCTURE IN PEROVSKITE-TYPE RMO(3) (R=LA, Y M=SC, TI, V, CR, MN, FE, CO, NI, CU) [J].

ARIMA, TH ;

TOKURA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (07) :2488-2501

[3] CSL DSC LATTICE MODEL FOR GENERAL CRYSTAL-CRYSTAL BOUNDARIES AND THEIR LINE DEFECTS [J].

BALLUFFI, RW ;

BROKMAN, A ;

KING, AH .

ACTA METALLURGICA, 1982, 30 (08) :1453-1470

[4] PROPERTIES OF EPITAXIAL YBA2CU3O7 THIN-FILMS ON AL2O3 (1BAR012) [J].

CHAR, K ;

FORK, DK ;

GEBALLE, TH ;

LADERMAN, SS ;

TABER, RC ;

JACOWITZ, RD ;

BRIDGES, F ;

CONNELL, GAN ;

BOYCE, JB .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :785-787

[5] NEUTRON-DIFFRACTION STUDY OF RNIO3 (R = LA,PR,ND,SM) - ELECTRONICALLY INDUCED STRUCTURAL-CHANGES ACROSS THE METAL-INSULATOR-TRANSITION [J].

GARCIAMUNOZ, JL ;

RODRIGUEZCARVAJAL, J ;

LACORRE, P ;

TORRANCE, JB .

PHYSICAL REVIEW B, 1992, 46 (08) :4414-4425

[6] MICROSTRUCTURE OF EPITAXIAL LA0.5SR0.5COO3/FERROELECTRIC PB0.9LA0.1(ZR0.2TI0.8)0.975O3/LA0.5SR0.5COO3 HETEROSTRUCTURES ON LAALO3 [J].

GHONGE, SG ;

GOO, E ;

RAMESH, R ;

SANDS, T ;

KERAMIDAS, VG .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1628-1630

[7] COMPARATIVE STUDY ON MAGNETIC BEHAVIOR OF LANIO3 AND LACUO3 PHASES [J].

GOODENOUGH, JB ;

MOTT, NF ;

POUCHARD, M ;

DEMAZEAU, G ;

HAGENMULLER, P .

MATERIALS RESEARCH BULLETIN, 1973, 8 (06) :647-655

[8] SUITABILITY OF METALORGANIC CHEMICAL-VAPOR DEPOSITION-DERIVED PRGAO3 FILMS AS BUFFER LAYERS FOR YBA2CU3O7-X PULSED-LASER DEPOSITION [J].

HAN, B ;

NEUMAYER, DA ;

MARKS, TJ ;

RUDMAN, DA ;

ZHANG, H ;

DRAVID, VP .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3639-3641

[9] DEPOSITION OF LAMO(3) (M=NI, CO, CR, AL)-ORIENTED FILMS BY SPRAY COMBUSTION-FLAME TECHNIQUE [J].

ICHINOSE, H ;

SHIWA, Y ;

NAGANO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10) :5907-5910

[10] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS AT 600-DEGREES-C BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KAISER, DL ;

VAUDIN, MD ;

ROTTER, LD ;

WANG, ZL ;

CLINE, JP ;

HWANG, CS ;

MARINENKO, RB ;

GILLEN, JG .

APPLIED PHYSICS LETTERS, 1995, 66 (21) :2801-2803

← 1 2 3 →