Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter

被引：11

作者：

Laux, SE ^{[1
]}

Fischetti, MV ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The role of steady-state and transient velocity overshoot in switching an unloaded 0.1-micron CMOS inverter is evaluated for the first time using Monte Carlo device simulation. Our results indicate switching times decrease by similar to 1 psec for MC versus DD modeling. Unfortunately, no evidence is found that transient velocity overshoot contributes to this decrease in switching times.

引用

页码：877 / 880

页数：4