Relative absorption strengths of neutral and negatively charged excitons in CdTe quantum wells

被引：13

作者：

Miller, RB

Baron, T

Cox, RT ^{[1
]}

Saminadayar, K

机构：

[1] CEA, Lab Phys Semicond, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 09, France

[2] La Trobe Univ, Sch Phys, Bundaberg, Qld 3083, Australia

[3] Univ Grenoble 1, CNRS, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

excitons; quantum wells; two dimensional electron gas; CdTe;

D O I：

10.1016/S0022-0248(98)80171-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Excitonic absorption is studied in CdTe/Cd1-xZnxTe multiple quantum well samples that were double-doped in the barriers with indium donors and nitrogen accepters. Under optical pumping, holes are trapped by accepters and electrons form a 2D electron gas in the wells with power-dependent concentration n(c). The absorption intensities of the neutral exciton X and the charged exciton X- are measured in an 8 T field. As n(c) varies from 0 upto about 10(11) cm(-2), there is both a sharing of intensity between X and X- and an overall decrease of their summed absorption. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：822 / 825

页数：4

共 5 条

[1] NITROGEN DOPING OF TELLURIUM-BASED II-VI COMPOUNDS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].