Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells

被引：9

作者：

Bergmann, RB ^{[1
]}

Krinke, J ^{[1
]}

Strunk, HP ^{[1
]}

Werner, JH ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We deposit phosphorus-doped, amorphous Si by low pressure chemical vapor deposition and subsequently crystallize the films by furnace annealing at a temperature of 600 degrees C. Optical in-situ monitoring allows one to control the crystallization process. Phosphorus doping leads to faster crystallization and a grain size enhancement with a maximum grain size of 15 mu m. Using transmission electron microscopy we find a log-normal grain size distribution in our films. We demonstrate that this distribution not only arises from solid phase crystallization of amorphous Si but also from other crystallization processes based on random nucleation and growth The lognormal grain size distribution seems to be a general feature of polycrystalline semiconductors.

引用

页码：325 / 330

页数：6