Complete-abrasive-free process for copper Damascene interconnection

被引：20

作者：

Kondo, S ^{[1
]}

Sakuma, N ^{[1
]}

Homma, Y ^{[1
]}

Goto, Y ^{[1
]}

Ohashi, N ^{[1
]}

Yamaguchi, H ^{[1
]}

Owada, N ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Complete-abrasive-free process for copper (Cu) damascene interconnection has been developed. The process is a combination of a newly developed abrasive-free chemical polishing (AFP) of Cu and dry etching of a barrier metal layer. Complete stop-on-barrier characteristics of Cu polishing are attained by using the new polishing agent and a polyurethane polishing pad. This combination produces a very clean, scratch-free, anticorrosive polished surface, and the total depth of erosion and dishing is reduced to less than one fifth of that produced by conventional slurries even after 100% over polishing. And it is shown that the developed AFP significantly reduces both Cu line resistance and its deviation.

引用

页码：253 / 255

页数：3

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