Raman scattering study of surface barriers in GaAs passivated in alcoholic sulfide solutions

被引：46

作者：

Bessolov, VN ^{[1
]}

Lebedev, MV ^{[1
]}

Zahn, DRT ^{[1
]}

机构：

[1] TU CHEMNITZ,INST PHYS,D-09107 CHEMNITZ,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.366079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman scattering has been used to study the variation of surface barriers In GaAs due to sulfur passivation in solutions of ammonium sulfide [(NH4)(2)S] in different alcohols (ethanol, isopropanol, and tert-butanol). It has been found that the surface barrier height and the depletion layer width decrease considerably with the decrease of the dielectric constant of the passivating solution. (C) 1997 American Institute of Physics.

引用

页码：2640 / 2642

页数：3

共 14 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[2] BAUER G, 1996, OPTICAL CHARACTERIZA
[3] Bessolov V. N., 1996, Technical Physics Letters, V22, P749
[4] Solvent effect on the properties of sulfur passivated GaAs
Bessolov, VN
Konenkova, EV
Lebedev, MV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2761 - 2766
[5] Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation
Bessolov, VN
Konenkova, EV
Lebedev, MV
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 376 - 379
[6] RAMAN-SCATTERING MEASUREMENTS OF DECREASED BARRIER HEIGHTS IN GAAS FOLLOWING SURFACE CHEMICAL PASSIVATION
FARROW, LA
SANDROFF, CJ
TAMARGO, MC
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1931 - 1933
[7] ANALYSIS OF BAND BENDING AT III-V-SEMICONDUCTOR INTERFACES BY RAMAN-SPECTROSCOPY
GEURTS, J
[J]. SURFACE SCIENCE REPORTS, 1993, 18 (1-3) : 1 - 89
[8] Hayes W., 1978, SCATTERING LIGHT CRY
[9] LIDE DR, 1995, CRC HDB CHEM PHYSICS
[10] SURFACE STATES ASSOCIATED WITH ACID SITES ON SOLIDS
MORRISON, SR
[J]. SURFACE SCIENCE, 1975, 50 (02) : 329 - 342

← 1 2 →