Room-temperature electronic phase transitions in the continuous phase diagrams of perovskite manganites

被引:66
作者
Yoo, YK
Duewer, F
Yang, HT
Yi, D
Li, JW
Xiang, XD [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Environm Energy Technol Div, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
关键词
D O I
10.1038/35021018
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Highly correlated electronic systems-such as transition-metal oxides that are doped Mott insulators-are complex systems which exhibit puzzling phenomena, including high-temperature superconductivity and colossal magnetoresistivity. Recent studies(1-3) suggest that in such systems collective electronic phenomena are important, arising from long-range Coulomb interactions and magnetic effects. The qualitative behaviour of these systems is strongly dependent on charge filling (the level of doping) and the lattice constant. Here we report a time-efficient and systematic experimental approach for studying the phase diagrams of condensed-matter systems. It involves the continuous mapping of the physical properties of epitaxial thin films of perovskite manganites (a class of doped Mott insulator) as their composition is varied. We discover evidence that suggests the presence of phase boundaries of electronic origin at room temperature.
引用
收藏
页码:704 / 708
页数:6
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