Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection

被引：28

作者：

Deboy, G

Solkner, G

Wolfgang, E

Claeys, W

机构：

[1] Siemens AG, Corporate Research and Development, D-81739 München

[2] Université de Bordeaux I, CPMOH, F-33405 Talence, 351, Cours de la Libération

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 31卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00352-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：299 / 307

页数：9

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