Epitaxial Graphene Growth on SiC Wafers

被引：28

作者：

Gaskill, D. K. ^{[1
]}

Jernigan, G. G. ^{[2
]}

Campbell, P. M. ^{[2
]}

Tedesco, J. L. ^{[1
]}

Culbertson, J. C. ^{[2
]}

VanMill, B. L. ^{[1
]}

Myers-Ward, R. L. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Moon, J. ^{[3
]}

Curtis, D. ^{[3
]}

Hu, M. ^{[3
]}

Wong, D. ^{[3
]}

McGuire, C. ^{[3
]}

Robinson, J. A. ^{[4
]}

Fanton, M. A. ^{[4
]}

Stitt, J. P. ^{[4
]}

Stitt, T. ^{[4
]}

Snyder, D. ^{[4
]}

Wang, X. ^{[4
]}

Frantz, E. ^{[4
]}

机构：

[1] USN, Res Lab, Adv SiC Epitaxial Res Lab, Washington, DC 20375 USA

[2] US Naval, Res Lab, Washington, DC 20375 USA

[3] HRL Labs LLC, Malibu, CA 90265 USA

[4] Penn State Univ, University Pk, PA 16802 USA

来源：

GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS | 2009年 / 19卷 / 05期

关键词：

GRAPHITE;

D O I：

10.1149/1.3119535

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with f(max) of 14 GHz.

引用

页码：117 / +

页数：3

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