A polar modulator transmitter for GSM/EDGE

被引：70

作者：

Elliott, MR ^{[1
]}

Montalvo, T ^{[1
]}

Jeffries, BR ^{[1
]}

Murden, F ^{[1
]}

Strange, J ^{[1
]}

Hill, A ^{[1
]}

Nandipaku, S ^{[1
]}

Harrebek, J ^{[1
]}

机构：

[1] Analog Devices Inc, Greensboro, NC 27409 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 12期

关键词：

D O I：

10.1109/JSSC.2004.836340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This 0.5-mum SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. Envelope information is extracted from the transmit IF and applied to the phase-modulated carrier in an RF variable gain amplifier which follows the integrated transmit VCO. The dualband IC supports all four GSM bands. In EDGE mode, the IC produces more than 1 dBm of output power with more than 6 dB of margin to the transmit spectrum mask and less than 3 % rms phase error. In GSM mode, more than 7 dBm of output power is produced with noise in the receive band less than - 164 dBc/Hz.

引用

页码：2190 / 2199

页数：10

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