Dynamical mean-field studies of metal-insulator transitions

被引：41

作者：

Dobrosavljevic, V ^{[1
]}

Kotliar, G

机构：

[1] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA

[2] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

[3] Rutgers State Univ, Serin Phys Lab, Piscataway, NJ 08855 USA

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1735期

关键词：

metal-insulator transitions; strong correlations; disorder; Anderson localization; local magnetic moments; dynamical mean-field theory;

D O I：

10.1098/rsta.1998.0149

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We discuss the successes of the dynamical mean-field (DMF) approach to metal-insulator transitions in both the clean and the disordered Limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.

引用

页码：57 / 72

页数：16

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