Emerging Photoluminescence in Monolayer MoS2

被引：8122

作者：

Splendiani, Andrea ^{[1
,2
]}

Sun, Liang ^{[1
]}

Zhang, Yuanbo ^{[1
]}

Li, Tianshu ^{[3
]}

Kim, Jonghwan ^{[1
]}

Chim, Chi-Yung ^{[1
]}

Galli, Giulia ^{[3
]}

Wang, Feng ^{[1
,4
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Scuola Galileiana Studi Super Padova, I-35122 Padua, Italy

[3] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 04期

基金：

美国国家科学基金会;

关键词：

Photoluminescence; two-dimensional materials; metal dichalcogenide; ELECTRONIC-STRUCTURE; NANOCRYSTALS; CRYSTALS; GRAPHENE; SILICON; RAMAN; WSE2;

D O I：

10.1021/nl903868w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.

引用

页码：1271 / 1275

页数：5

共 21 条

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