The formation of different structures of poly(3-hexylthiophene) film on a patterned substrate by dip coating from aged solution

被引：34

作者：

Xue, Longjian ^{[1
]}

Gao, Xiang ^{[1
]}

Zhao, Kui ^{[1
]}

Liu, Jiangang ^{[1
]}

Yu, Xinhong ^{[1
]}

Han, Yanchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 14期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTOR; LIGHT-EMITTING-DIODES; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); SINGLE-CRYSTALS; EFFECT MOBILITY; THIN-FILMS; SURFACES; GROWTH; EVAPORATION; PARAMETERS;

D O I：

10.1088/0957-4484/21/14/145303

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Different local morphologies of poly(3-hexylthiophene) (P3HT, M-w = 87 000 and 30 000-40 000 g mol(-1)) are grown on a patterned substrate, which is composed of octadecyltrichlorosilane (OTS area) stripes on a silicon wafer (SiOx area), via dip coating from the aged solutions. Bundles of P3HT (M-w = 87 000 g mol(-1)) nanorods on the SiOx area and long nanofibrillar crystals on the OTS area are generated simultaneously from the one-day-aged 1 mg ml(-1) solution, while oriented P3HT (M-w = 30 000-40 000 g mol(-1)) nanofibrillar crystals parallel to the long axis of the OTS pattern form on the OTS area from the seven-days-aged solution (1 mg ml(-1)). Different dimensional sizes of the P3HT aggregate in the toluene solution upon aging and the flow of the solution from SiOx to the OTS area, on which the receding contact angle is larger than that on the SiOx area, determines the local structures of the P3HT film on the patterned substrate.

引用

页数：9

共 44 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].