Thermomechanical finite element analysis of problems in electronic packaging using the disturbed state concept: Part 1 - Theory and formulation

被引:30
作者
Basaran, C [1 ]
Desai, CS
Kundu, T
机构
[1] SUNY Buffalo, Dept Civil Engn, Buffalo, NY 14260 USA
[2] Univ Arizona, Dept Civil Engn & Engn Mech, Tucson, AZ 85718 USA
关键词
D O I
10.1115/1.2792284
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Accurate prediction of the thermomechanical cyclic behavior of joints and interfaces in semiconductor devices is essential for their reliable design. In order to understand and predict the behavior of such interfaces there is a need for improved and unified constitutive models that can include elastic, inelastic, viscous, and temperature dependent microstructural behavior. Furthermore, such unified material models should be implemented in finite element procedures so as to yield accurate and reliable predictions of stresses, strains deformations, microcracking, damage, and number of cycles to failure due to thermomechanical loading. The main objective of this paper is to present implementation of such an unified constitutive model in a finite element procedure and its application to typical problems in electronic packaging; details of the constitutive model are given by Desai et al. (1995). Details of the theoretical formulation is presented in this Part 1, while its applications and validations are presented in Part 2, Basaran et al. (1998).
引用
收藏
页码:41 / 47
页数:7
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