Nanometer-scale gap control for low voltage and high current operation of field emission array

被引：33

作者：

Lee, HI ^{[1
]}

Park, SS ^{[1
]}

Park, DI ^{[1
]}

Hahm, SH ^{[1
]}

Lee, JH ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for nanometer-scale gap formation was proposed and investigated for the possibility in vacuum microelectronic device application. When the temperature is down at the end of oxidation, the compressive stress induced at the initially connected slim polysilicon patterns forces to be separated into two parts, yielding wedge-shaped cathode and anode tips for a field emission array with extremely small interelectrode distance. The oxidation time and the polysilicon thickness are the key parameters to control the interelectrode gap. The fabricated field emission devices show very high emission current with low turn-on voltage. (C) 1998 American Vacuum Society. [S0734-211X(98)07702-6].

引用

页码：762 / 764

页数：3

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