Gauge factor of thick-film resistors:: Outcomes of the variable-range-hopping model

被引：19

作者：

Grimaldi, C ^{[1
]}

Ryser, P ^{[1
]}

Strässler, S ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, IPM, Dept Microtech, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.1290738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of transport in thick-film resistors remains unclear. However, recent low-temperature measurements point toward a possible variable-range-hopping mechanism of transport. Here, we examine how such a mechanism affects the gauge factor of thick-film resistors. We find that at sufficiently low temperatures T, for which the resistivity follows the Mott's law R(T)similar to exp(T-0/T)(1/4), the gauge factor (GF) is proportional to (T-0/T)(1/4). Moreover, the inclusion of Coulomb gap effects leads to GF similar to(T-0'/T)(1/2) at lower temperatures. In addition, we study a simple model which generalizes the variable-range-hopping mechanism by taking into account the finite mean intergrain spacing. Our results suggest a possible experimental verification of the validity of the variable-range hopping in thick-film resistors. (C) 2000 American Institute of Physics. [S0021-8979(00)03320-X].

引用

页码：4164 / 4169

页数：6

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