Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts

被引：8

作者：

Matsuda, K ^{[1
]}

Watari, N ^{[1
]}

Kamijo, A ^{[1
]}

Tsuge, H ^{[1
]}

机构：

[1] NEC Corp Ltd, Funct Mat Res Labs, Miyamae Ku, Kanagawa 2168555, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1323740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spuriously reduced magnetoresistance (MR) ratios have been observed in magnetic tunnel junctions in which a square contact portion with dimensions smaller than the width of the lead electrodes connects both the top and bottom lead electrodes. The phenomenon becomes apparent by measuring the magnetoresistance of the junctions with various sizes systematically varied under a fixed line width of the electrodes. Observed junction size dependence of resistance (R)xarea(A) products and MR ratios were analyzed through finite difference calculation, and it was found that there exist junction sizes for which RxA products and MR ratios are larger and smaller, respectively, than the intrinsic ones. (C) 2000 American Institute of Physics. [S0003-6951(00)02745-5].

引用

页码：3060 / 3062

页数：3

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