Polarization-engineered removal of buffer leakage for GaN transistors

被引：42

作者：

Cao, Yu ^{[1
]}

Zimmermann, Tom ^{[1
]}

Xing, Huili ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

buffer layers; current density; gallium compounds; high electron mobility transistors; III-V semiconductors; leakage currents; polarisation; semiconductor epitaxial layers; wide band gap semiconductors; MOLECULAR-BEAM EPITAXY; ELECTRON-MOBILITY TRANSISTORS; NUCLEATION LAYER GROWTH; PLASMA-ASSISTED MBE; POWER PERFORMANCE; ALGAN-GANHEMTS; X-BAND; CARBON; RATIO;

D O I：

10.1063/1.3293454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dopant-free epitaxial technique is developed to achieve highly insulating buffers on semi-insulating GaN templates for nitride high electron mobility transistors by using the large polarization fields. The buffer leakage current density is reduced by several orders of magnitude, exhibiting outstanding insulating and breakdown properties. The simple polarization- and heterostructure-based solution should prove highly attractive for GaN high electron mobility transistors for analog (rf), digital, and high-voltage switching applications.

引用

页数：3

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