Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

被引:213
作者
Gierz, Isabella [1 ]
Suzuki, Takayuki [1 ]
Weitz, R. Thomas [1 ]
Lee, Dong Su [1 ]
Krauss, Benjamin [1 ]
Riedl, Christian [1 ]
Starke, Ulrich [1 ]
Hoechst, Hartmut [2 ]
Smet, Jurgen H. [1 ]
Ast, Christian R. [1 ]
Kern, Klaus [1 ,3 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Wisconsin Madison, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
[3] Ecole Polytech Fed Lausanne, Inst Phys Matiere Condensee, CH-1015 Lausanne, Switzerland
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 23期
基金
美国国家科学基金会;
关键词
GRAPHITE MONOLAYER; RAMAN-SPECTROSCOPY; NI(111);
D O I
10.1103/PhysRevB.81.235408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp(3)-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp(2)-hybridized graphene layer with improved electronic properties.
引用
收藏
页数:6
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