Experimental study on plasma engineering in 6500V IGBTs

被引：12

作者：

Wikström, T ^{[1
]}

Bauer, F

Linder, S

Fichtner, W

机构：

[1] Swiss Fed Inst Technol, ETH, Integrated Syst Lab, Zurich, Switzerland

[2] ABB Semicond AG, Lenzburg, Switzerland

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the design of high-voltage Insulated Gate Bipolar Transistors (IGBTs), especially the effects on the on-state excess carrier distribution and its consequences for the IGBT's on-state, turn-on and Safe Operating Area (SOA) properties. It is concluded that by careful design, considerable robustness is achievable together with total losses that are comparable to a state-of-the-art GCT Thyristor of similar voltage class.

引用

页码：37 / 40

页数：4