Surface vacancies in CVD diamond

被引：26

作者：

Allers, L ^{[1
]}

Mainwood, A ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

关键词：

cathodoluminescence; diamond defects; surface; modeling;

D O I：

10.1016/S0925-9635(97)00267-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Investigation of unpolished, high-quality chemical vapour deposition diamond films has revealed a significant concentration of vacancies within a few microns of the surface, but not in the bulk. Modelling of the growth, diffusion and trapping of vacancies shows that this arises from the growth of vacancies into the surface of the diamond and their subsequent migration and trapping as growth proceeds. Because the temperature at which the vacancies migrate is comparable with that of diamond growth, a unique situation arises: the lattice defects created during growth persist in the crystals. (C) 1998 Elsevier Science S.A.

引用

页码：261 / 265

页数：5

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