Femtosecond laser ablation of sapphire on different crystallographic facet planes by single and multiple laser pulses irradiation

被引:70
作者
Qi, Litao [1 ]
Nishii, Kazuhiro [2 ]
Yasui, Motohiro [2 ]
Aoki, Hikoharu [2 ]
Namba, Yoshiharu [1 ]
机构
[1] Chubu Univ, Dept Mech Engn, Aichi 4878501, Japan
[2] Brother Ind Ltd, Dept Engn, Engn Technol Dev Grp, Mizuho Ku, Aichi 4680841, Japan
关键词
Femtosecond laser pulses; Sapphire; Micro-crater; Coulomb explosion; PICOSECOND; DAMAGE; THRESHOLDS; SURFACES;
D O I
10.1016/j.optlaseng.2010.05.006
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ablation of sapphire on different crystallographic facet planes by single and multiple laser pulses irradiation was carried out with a femtosecond pulsed laser operating at a wavelength of 780 nm and a pulse width of 164 fs. The quality and morphology of the laser ablated sapphire surface were evaluated by scanning electron microscopy and atomic force microscopy. For single laser pulse irradiation, two ablation phases were observed, which have a strong dependency on the pulse energy The volume of the ablated craters kept an approximately linear relationship with the pulse energy. The threshold fluences of the two ablation phases on different crystallographic facet planes were calculated from the relationship between the squared diameter of the craters and pulse energy. With multiple laser pulses irradiation, craters free of cracks were obtained in the 'gentle' ablation phase. The threshold fluence for N laser pulses was calculated and found to decrease inversely to the number of laser pulses irradiating on the substrate surface due to incubation effect. The depth of the craters Increased with the number of laser pulses until reaching a saturation value. The mechanism of femtosecond laser ablation of sapphire in two ablation phases was discussed and identified as either phase explosion. Coulomb explosion or particle vaporization. The choice of crystallographic facet plane has little effect on the process of femtosecond laser ablation of sapphire when compared with the parameters of the femtosecond laser pulses, such as pulse energy and number of laser pulses. In the 'gentle' ablation phase, laser-induced periodic surface structures (LIPSS) with a spatial period of 340 nm were obtained and the mechanism of the LIPSS formation is discussed. There is a potential application of the femtosecond laser ablation to the fabrication of sapphire-based devices. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1000 / 1007
页数:8
相关论文
共 29 条
[1]   Femtosecond versus nanosecond laser machining: comparison of induced stresses and structural changes in silicon wafers [J].
Amer, MS ;
El-Ashry, MA ;
Dosser, LR ;
Hix, KE ;
Maguire, JF ;
Irwin, B .
APPLIED SURFACE SCIENCE, 2005, 242 (1-2) :162-167
[2]   Laser processing of sapphire with picosecond and sub-picosecond pulses [J].
Ashkenasi, D ;
Rosenfeld, A ;
Varel, H ;
Wahmer, M ;
Campbell, EEB .
APPLIED SURFACE SCIENCE, 1997, 120 (1-2) :65-80
[3]  
Belyaev L.M., 1980, Ruby and Sapphire
[4]   Femtosecond laser ablation of silicon-modification thresholds and morphology [J].
Bonse, J ;
Baudach, S ;
Krüger, J ;
Kautek, W ;
Lenzner, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :19-25
[5]   Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses [J].
Borowiec, A ;
Haugen, HK .
APPLIED PHYSICS LETTERS, 2003, 82 (25) :4462-4464
[6]   MECHANISM OF PICOSECOND ULTRAVIOLET-LASER SPUTTERING OF SAPPHIRE AT 266 NM [J].
BRAND, JL ;
TAM, AC .
APPLIED PHYSICS LETTERS, 1990, 56 (10) :883-885
[7]   Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy [J].
Cavalleri, A ;
Sokolowski-Tinten, K ;
Bialkowski, J ;
Schreiner, M ;
von der Linde, D .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3301-3309
[8]  
Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637
[9]   LASER ENERGY DEPOSITION AT SAPPHIRE SURFACES STUDIED BY PULSED PHOTOTHERMAL DEFORMATION [J].
DREYFUS, RW ;
MCDONALD, FA ;
VONGUTFELD, RJ .
APPLIED PHYSICS LETTERS, 1987, 50 (21) :1491-1493
[10]   Ultrafast-laser driven micro-explosions in transparent materials [J].
Glezer, EN ;
Mazur, E .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :882-884