Electronic structure of lanthan ditellurides

被引：55

作者：

Kikuchi, A ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 04期

关键词：

LaTe2; charge density wave;

D O I：

10.1143/JPSJ.67.1308

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure of LaTe2 is calculated from the first principles using DV-X alpha method. The Fermi surface of this material is mainly contributed from the Te square sheet in the crystal and it has several large parallel pieces that satisfy the nesting condition for CDW transition. Furthermore, the electronic structure of the LaTeSb, as an example of antimony doped case, will be presented. From the obtained Fermi surface the behavior of CDW will be discussed and related to the experimental data.

引用

页码：1308 / 1312

页数：5

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