Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

被引：4

作者：

Andrievskii, VV

Komnik, YF

Myronov, M

Mironov, OA ^{[1
]}

Rozheshchenko, A

Whall, TE

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Int Lab High Magnet Fields & Low Temp, PL-53421 Wroclaw, Poland

[3] Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 1-3期

关键词：

heterostructure; spin splitting; weak localization;

D O I：

10.1016/S1386-9477(02)01053-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The two-dimensional hole gas (2DHG) magnetoresistivity of a Si0.7Ge0.3/Si0.2Ge0.8 heterostructure in a wide range of temperatures T = 0.335-20 K and transport currents I = 100-50 muA is measured. In the vicinity of zero magnetic field, a sharp and positive in sign feature on smooth negative magnetoresistance is observed at the lowest temperatures. The amplitude of this feature quickly fades with increasing temperature and transport current. For the analysis of the experimental data the theory of weak localization for 2DHG is applied. The values of tau(so) and tau(tr) obtained are used for the first time to define zero magnetic field splitting in the hole energy spectrum for a Si0.7Ge0.3/Si0.2Ge0.8 heterostructure: Delta = 2.97 meV. (C) 2003 Published by Elsevier Science B.V.

引用

页码：145 / 146

页数：2

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