Growth and field electron emission of vertically aligned multiwalled carbon nanotubes

被引：84

作者：

Lee, CJ ^{[1
]}

Park, J

Kang, SY

Lee, JH

机构：

[1] Kunsan Natl Univ, Sch Elect Engn, Kunsan 573701, South Korea

[2] Korea Univ, Dept Chem, Jochiwon 339700, South Korea

[3] ETRI, Next Generat Semicond Res Dept, Microelect Labs, Taejon 305350, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2000年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/S0009-2614(00)00751-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertically well-aligned carbon nanotubes (CNTs) are grown on a Ni deposited silicon oxide substrate at 950 degrees C by thermal chemical vapor deposition using C2H2. The uniformly grown CNTs with a diameter of about 60 nm have unique beak-like tips without any encapsulated Ni particles inside and exhibit high field emission current density, e.g. 2.9 mA/cm(2) at 3.7 V/mu m, following a Fowler-Nordheim behavior. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：175 / 180

页数：6

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